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Effect of carrier transfer process between two kinds of localized potential traps on the spectral properties of InGaN/GaN multiple quantum wells

2018-03-08

Title: Effect of carrier transfer process between two kinds of localized potential traps on the spectral properties of InGaN/GaN multiple quantum wells
Authors: Liu, W; Zhao, DG; Jiang, DS; Shi, DP; Zhu, JJ; Liu, ZS; Chen, P; Yang, J; Liang, F; Liu, ST; Xing, Y; Zhang, LQ; Wang, WJ; Li, M; Zhang, YT; Du, GT
Author Full Names: Liu, Wei; Zhao, Degang; Jiang, Desheng; Shi, Dongping; Zhu, Jianjun; Liu, Zongshun; Chen, Ping; Yang, Jing; Liang, Feng; Liu, Shuangtao; Xing, Yao; Zhang, Liqun; Wang, Wenjie; Li, Mo; Zhang, Yuantao; Du, Guotong
Source: OPTICS EXPRESS, 26 (3):3427-3434; 10.1364/OE.26.003427 FEB 5 2018
ISSN: 1094-4087
Unique ID: WOS:000425365900113
PubMed ID: 29401870
全文链接:https://www.osapublishing.org/oe/abstract.cfm?uri=oe-26-3-3427&origin=search

 



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