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Influence of in doping in GaN barriers on luminescence properties of InGaN/GaN multiple quantum well LEDs

2018-03-08

Title: Influence of in doping in GaN barriers on luminescence properties of InGaN/GaN multiple quantum well LEDs
Authors: Wang, XW; Yang, J; Zhao, DG; Jiang, DS; Liu, ZS; Liu, W; Liang, F; Liu, ST; Xing, Y; Wang, WJ; Li, M
Author Full Names: Wang, Xiaowei; Yang, Jing; Zhao, Degang; Jiang, Desheng; Liu, Zongshun; Liu, Wei; Liang, Feng; Liu, Shuangtao; Xing, Yao; Wang, Wenjie; Li, Mo
Source: SUPERLATTICES AND MICROSTRUCTURES, 114 32-36; 10.1016/j.spmi.2017.11.038 FEB 2018
ISSN: 0749-6036
Unique ID: WOS:000425199200004
全文链接:https://www.sciencedirect.com/science/article/pii/S0749603617324333

 

 



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