Temperature dependent excitonic transition energies and linewidths of mon...
Moire Phonons in Twisted Bilayer MoS2
Resistivity reduction of low temperature grown p-Al0.09Ga0.91N by suppres...
Theoretical analysis of induction heating in high-temperature epitaxial g...
Deep levels induced optical memory effect in thin InGaN film
Topologically protected interface phonons in two-dimensional nanomaterial...
Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of I...
Photonic Crystal Diode Laser Array Integrated With a Phase Shifter for Na...
Microwave Photonics for Featured Applications in High-Speed Railways: Com...
Toward Monolithic Integration of OEOs: From Systems to Chips
官方微信
友情链接

2.4-3.2 GHz robust self-injecting injection-locked phase-locked loop

2018-05-17

Title: 2.4-3.2 GHz robust self-injecting injection-locked phase-locked loop
Authors: Yang, JC; Zhang, Z; Qi, N; Liu, LY; Liu, J; Wu, NJ
Author Full Names: Yang, Jincheng; Zhang, Zhao; Qi, Nan; Liu, Liyuan; Liu, Jian; Wu, Nanjian
Source: JAPANESE JOURNAL OF APPLIED PHYSICS, 57 (4):SI 10.7567/JJAP.57.04FF05 APR 2018
ISSN: 0021-4922
eISSN: 1347-4065
Article Number: 04FF05
Unique ID: WOS:000430981800072
全文链接:http://iopscience.iop.org/article/10.7567/JJAP.57.04FF05

 

 



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 ? 中国科学院半导体研究所

备案号:京ICP备05085259号 京公网安备110402500052 中国科学院半导体所声明