Temperature dependent excitonic transition energies and linewidths of mon...
Moire Phonons in Twisted Bilayer MoS2
Resistivity reduction of low temperature grown p-Al0.09Ga0.91N by suppres...
Theoretical analysis of induction heating in high-temperature epitaxial g...
Deep levels induced optical memory effect in thin InGaN film
Topologically protected interface phonons in two-dimensional nanomaterial...
Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of I...
Photonic Crystal Diode Laser Array Integrated With a Phase Shifter for Na...
Microwave Photonics for Featured Applications in High-Speed Railways: Com...
Toward Monolithic Integration of OEOs: From Systems to Chips
官方微信
友情链接

Topologically protected interface phonons in two-dimensional nanomaterials: hexagonal boron nitride and silicon carbide

2018-09-20

Topologically protected interface phonons in two-dimensional nanomaterials: hexagonal boron nitride and silicon carbide
Authors: Jiang, JW; Wang, BS; Park, HS
NANOSCALE
Volume: 10 Issue: 29 Pages: 13913-13923 Published: AUG 7 2018 Document type: Article
DOI: 10.1039/c8nr04314k
全文链接:http://pubs.rsc.org/en/content/articlelanding/2018/nr/c8nr04314k

 

 



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 ? 中国科学院半导体研究所

备案号:京ICP备05085259号 京公网安备110402500052 中国科学院半导体所声明