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Effect of dual-temperature-grown InGaN/GaN multiple quantum wells on luminescence characteristics

2019-05-09

Authors: Wang, XW; Liang, F; Zhao, DG; Jiang, DS; Liu, ZS; Zhu, JJ; Yang, J; Wang, WJ
JOURNAL OF ALLOYS AND COMPOUNDS
Volume: 790 Pages: 197-202 Published: JUN 25 2019 Language: English Document type: Article
DOI: 10.1016/j.jallcom.2019.03.180
Abstract:
Room-temperature electroluminescence spectra of InGaN/GaN multiple quantum well (MQW) structures grown on sapphire substrate by metalorganic chemical vapor deposition (MOCVD) were investigated. It is found that, in comparison with the same-temperature growth of MQW layers, GaN barrier layers grown at a temperature higher than the well layer growth of 790 degrees C are beneficial to improve the emission intensity of InGaN/GaN MQWs. The XRD and AFM measurements show a better interface quality and less non-radiative recombination centers (trench defects) exist in the dual-temperaturegrown InGaN MQWs between InGaN well and GaN barrier layers. In addition, increasing barriers growth temperature will induce less concentration of deeper localization states which may contribute to a blue shift of EL emission wavelength. (C) 2019 Elsevier B.V. All rights reserved.
全文链接:https://www.sciencedirect.com/science/article/pii/S0925838819309934



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