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Semiconductor-metal transition in GaAs nanowires under high pressure

2019-08-12

Authors: Liang, YL; Yao, Z; Yin, XT; Wang, P; Li, LX; Pan, D; Li, HY; Li, QJ; Liu, BB; Zhao, JH

CHINESE PHYSICS B

Volume: 28 Issue: 7 Published: JUL 2019 Language: English Document type: Article

DOI: 10.1088/1674-1056/28/7/076401

Abstract:

We investigate the structural phase transitions and electronic properties of GaAs nanowires under high pressure by using synchrotron x-ray diffraction and infrared reflectance spectroscopy methods up to 26.2 GPa at room temperature. The zinc-blende to orthorhombic phase transition was observed at around 20.0 GPa. In the same pressure range, pressure-induced metallization of GaAs nanowires was confirmed by infrared reflectance spectra. The metallization originates from the zinc-blende to orthorhombic phase transition. Decompression results demonstrated that the phase transition from zinc-blende to orthorhombic and the pressure-induced metallization are reversible. Compared to bulk materials, GaAs nanowires show larger bulk modulus and enhanced transition pressure due to the size effects and high surface energy.

Full Text: http://cpb.iphy.ac.cn/EN/abstract/abstract74194.shtml



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