A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

Realization of fast switching speed and electronic synapse in Ta/TaOx/AlN/Pt bipolar resistive memory

2020-06-11

 

Author(s): Cao, G (Cao, Gang); Yan, XB (Yan, Xiaobing); Wang, JJ (Wang, Jingjuan); Zhou, ZY (Zhou, Zhenyu); Lou, JZ (Lou, Jianzhong); Wang, KY (Wang, Kaiyou)

Source: AIP ADVANCES Volume: 10 Issue: 5 Article Number: 055312 DOI: 10.1063/5.0007393 Published: MAY 1 2020

Abstract: Resistive random-access memory plays a key role in non-volatile and neuromorphic artificial electronic devices. In this work, we fabricated Ta/TaOx/AlN/Pt resistive memory devices with the inserted AlN layer to improve the performance. The devices have better stability, lower threshold voltage (approximate to 0.37 V), longer retention time (>10(4) s), and faster switching speed (9 ns) than those without the AlN film layer. More importantly, when different pulse parameters were applied, two phenomena, abrupt jumps in conductance and gradual change in conductance, were obtained. Furthermore, the biological synaptic functions were simulated, including the spiking-time-dependent plasticity and the paired-pulse facilitation. The Ta/TaOx/AlN/Pt resistive memory devices offer promising features; hence, they are good candidates for next-generation electronic devices for chip systems. (c) 2020 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).

Accession Number: WOS:000536229300003

eISSN: 2158-3226

Full Text: https://aip.scitation.org/doi/10.1063/5.0007393



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明