In situ TEM observation of the vapor-solid-solid growth of InAs nanowires
Author(s): Sun, Q (Sun, Qiang); Pan, D (Pan, Dong); Li, M (Li, Meng); Zhao, JH (Zhao, Jianhua); Chen, PP (Chen, Pingping); Lu, W (Lu, Wei); Zou, J (Zou, Jin)
Source: NANOSCALE Volume: 12 Issue: 21 Pages: 11711-11717 DOI: 10.1039/d0nr02892d Published: JUN 7 2020
Abstract: In situ transmission electron microscopy characterization is a powerful method in investigating the growth mechanism of catalyst-induced semiconductor nanowires. By providing direct evidence on the crystal growth at the atomic level, a real-time in situ heating investigation was carried out on Au-catalyzed InAs nanowires. It was found that the Au catalyst maintained itself in the solid form during the nanowire growth, and maintained a fixed epitaxial relationship with its underlying InAs nanowire, indicating the vapor-solid-solid mechanism. Importantly, the growth of InAs nanowires through a layer-by-layer manner at the catalyst/nanowire interface is evident. This study provides direct insights into the vapor-solid-solid growth and clarified the growth mechanism of III-V nanowires, which provides pathways in controlling the growth of semiconductor nanowires.
Accession Number: WOS:000540759000031
PubMed ID: 32452500
Author Identifiers:
Author Web of Science ResearcherID ORCID Number
Sun, Qiang 0000-0001-5328-7605
Pan, Dong 0000-0003-2067-6983
Zou, Jin B-3183-2009 0000-0001-9435-8043
ISSN: 2040-3364
eISSN: 2040-3372
Full Text: https://pubs.rsc.org/en/content/articlelanding/2020/NR/D0NR02892D#!divAbstract