A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

In situ TEM observation of the vapor-solid-solid growth of InAs nanowires

2020-07-02

Author(s): Sun, Q (Sun, Qiang); Pan, D (Pan, Dong); Li, M (Li, Meng); Zhao, JH (Zhao, Jianhua); Chen, PP (Chen, Pingping); Lu, W (Lu, Wei); Zou, J (Zou, Jin)

Source: NANOSCALE Volume: 12 Issue: 21 Pages: 11711-11717 DOI: 10.1039/d0nr02892d Published: JUN 7 2020

Abstract: In situ transmission electron microscopy characterization is a powerful method in investigating the growth mechanism of catalyst-induced semiconductor nanowires. By providing direct evidence on the crystal growth at the atomic level, a real-time in situ heating investigation was carried out on Au-catalyzed InAs nanowires. It was found that the Au catalyst maintained itself in the solid form during the nanowire growth, and maintained a fixed epitaxial relationship with its underlying InAs nanowire, indicating the vapor-solid-solid mechanism. Importantly, the growth of InAs nanowires through a layer-by-layer manner at the catalyst/nanowire interface is evident. This study provides direct insights into the vapor-solid-solid growth and clarified the growth mechanism of III-V nanowires, which provides pathways in controlling the growth of semiconductor nanowires.

Accession Number: WOS:000540759000031

PubMed ID: 32452500

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

Sun, Qiang                  0000-0001-5328-7605

Pan, Dong                  0000-0003-2067-6983

Zou, Jin         B-3183-2009         0000-0001-9435-8043

ISSN: 2040-3364

eISSN: 2040-3372

Full Text: https://pubs.rsc.org/en/content/articlelanding/2020/NR/D0NR02892D#!divAbstract



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明