报告题目: Perpendicular Magnetic Materials for Spin Memory, Logic and Computation

报 告 人: Prof. Jian-Ping Wang（University of Minnesota, USA）

时间: 2012年7月9日(星期一) 上午 10:00

地点: 中国科学院半导体研究所学术沙龙室

Abstract: Spin-based computation has the promise to overcome the power, performance and architectural constraints of conventional CMOS based logic. All-spin logic devices based on the hybridization of perpendicular magnetic materials and semiconductors can fundamentally outperform their charge-based counterparts because of their unique scalability and compatibility with well-developed spin transfer torque (STT) memory technology. Ground-breaking experimental and theoretical investigations performed in the past decades have cleared the pathway to realizing spin- based computation. These include successful demonstrations of perpendicular spin transfer torque (STT) devices, spin injection and detection into semiconductors, switching ferromagnets using pure spin currents, and all-spin logic architectures. In the first part of my talk, I will review our early work on the world first demonstration of perpendicular spin transfer torque device, report our recent demonstration of the world most fast switching magnetic tunnel junction with partial perpendicular magnetic anisotropy by spin transfer torque, and then discuss our recent design and fabrication of a multiple MTJ based logic circuit which computes logic functions while transferring the data to the next logic gate without an intermediate sense amplifier. In the second part of my talk, I will discuss our recent effort to synthesize a unique perpendicular magnetic material (Fe16N2), which not only has the large perpendicular magnetic anisotropy but also a reasonable high spin polarization ratio and potential low damping constant. Those desired properties haven’t be achieved in other material systems yet.

报告人简介：王建平博士是美国明尼苏达大学杰出McKnight 终生讲座教授. 王建平教授的研究方向包括新型纳米磁性材料和器件的研究和制备、纳米自旋电子器件（自旋随机存储和自旋逻辑器件），以及在信息存储和生物医疗方面的应用。王教授在磁性信息存储方面取得了很多科研成果，并与工业界合作，实现了成果转化。目前王教授在国际期刊上发表学术论文200多篇，获得美国授权发明专利9项，正在申请美国发明专利8 项，出席各类国际学术会议并做邀请报告50多次。主编及参与编写磁性材料和器件相关专著4部。2006年荣获美国信息存储工业联盟（INSIC）技术成就奖。