In-Sensor Polarimetric Optoelectronic Computing Based on Gate-Tunable 2D ...
Multi-Color Detection of Single Sensor Based on Tellurium Relaxation Char...
Uncooled InAsSb- based high- speed mid- wave infrared barrier detector
High Frequency Mid-Infrared Quantum Cascade Laser Integrated With Grounde...
Multi-function sensing applications based on high Q-factor multi-Fano res...
High-power electrically pumped terahertz topological laser based on a sur...
Van der Waals polarity-engineered 3D integration of 2D complementary logic
Distinguishing the Charge Trapping Centers in CaF2-Based 2D Material MOSFETs
Influence of Growth Process on Suppression of Surface Morphological Defec...
High-Power External Spatial Beam Combining of 7-Channel Quantum Cascade L...
官方微信
友情链接

5.32 W ultraviolet laser generation at 266 nm using sum-frequency method with CsB3O5 crystal

2023-03-14

 

Author(s): Chen, XD (Chen, Xudong); Chen, YW (Chen, Yuwei); Zhang, L (Zhang, Ling); Fan, FD (Fan, Feidi); Zhang, ZY (Zhang, Zhiyan); Zhang, GC (Zhang, Guochun); Wang, XY (Wang, Xiaoyang); Wang, LR (Wang, Lirong)

Source: OPTICS EXPRESS Volume: 31 Issue: 2 Pages: 802-809 DOI: 10.1364/OE.474095 Published: JAN 16 2023

Abstract: Ultraviolet (UV) beam generation at 266 nm using the sum-frequency (SFG) method with CsB3O5 (CBO) crystals was first suggested in 1997 [Opt. Lett. 22, 1840 (1997).]; however, there has been no further research in the past 25 years. Herein, by sum-frequency mixing in CBO crystals, we obtained a high conversion efficiency picosecond (ps) and a high-power nanosecond (ns) 266 nm UV beam output. First, a ps laser device with simultaneously radiated wavelengths of 1064 and 355 nm and repetition frequency of 10 Hz was used as the fundamental laser source, and the conversion efficiency from 1064 + 355 nm to 266 nm reached 20.35%. We then used a 1064 nm ns laser with a high output power and repetition frequency of 10 kHz as the pump source. We accurately modified the optimal phase matching direction of the CBO crystal, and the achieved output power at 266 nm reached 5.32 W.

Accession Number: WOS:000921618900003

PubMed ID: 36785129

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

wang, xiao yang                  0000-0003-1757-7300

ISSN: 1094-4087

Full Text: https://opg.optica.org/oe/fulltext.cfm?uri=oe-31-2-802&id=524656



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明