In-Sensor Polarimetric Optoelectronic Computing Based on Gate-Tunable 2D ...
Multi-Color Detection of Single Sensor Based on Tellurium Relaxation Char...
Uncooled InAsSb- based high- speed mid- wave infrared barrier detector
High Frequency Mid-Infrared Quantum Cascade Laser Integrated With Grounde...
Multi-function sensing applications based on high Q-factor multi-Fano res...
High-power electrically pumped terahertz topological laser based on a sur...
Van der Waals polarity-engineered 3D integration of 2D complementary logic
Distinguishing the Charge Trapping Centers in CaF2-Based 2D Material MOSFETs
Influence of Growth Process on Suppression of Surface Morphological Defec...
High-Power External Spatial Beam Combining of 7-Channel Quantum Cascade L...
官方微信
友情链接

Inverse design of a broadband tunable terahertz metasurface absorber

2023-06-19
 Author(s): Wang, YD (Wang, Yuandong); Wu, GZ (Wu, Guozhang); Wang, YB (Wang, Yibo); Liu, JG (Liu, Jianguo)
 
Source: OPTICS COMMUNICATIONS Volume: 540  Article Number: 129526  DOI: 10.1016/j.optcom.2023.129526  Early Access Date: MAY 2023   Published: AUG 1 2023 
 
Abstract: A tunable terahertz vanadium dioxide (VO2) metasurface absorber based on inverse design is proposed and demonstrated numerically. The inverse design is a novel design method by which the optical structure found is based on the desired functional properties, significantly improving the design efficiency of optical structures. The metasurface absorber accomplishes more than 90% absorption between 2.88 and 7.15 THz. Peak absorption intensity may be dynamically changed between 4% and 96% as VO2 conductivity is changed between 200 S/m and 2 x 105 S/m. The physical mechanism is discussed by interference phase extinction, the theory of impedance matching and field distributions. The suggested absorber can be used for energy harvesting and terahertz filtering.
 
Accession Number: WOS:000998669500001
 
ISSN: 0030-4018
 
eISSN: 1873-0310


关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明