First-Principles Study of Schottky Barrier Heights on Metal/4H-SiC Polar ...
New Insights into the Interface Trap Generation during Hot Carrier Degrad...
Across-dimensional optical constellation de-aggregations from QAMs to PAM...
Towards Fully Decoupled End-to-End Person Search   (Open Access)
Comprehensive Study of NBTI and Off-State Reliabilty in Sub-20 nm DRAM Te...
An Ultrasensitive Ti3C2Tx MXene-based Soft Contact Lens for Continuous an...
Analysis of the Thickness of Multilayered Porous Silicon in the Cold Emis...
Study on Quantum Well Intermixing Induced by Zn Impurities in GaInP/AlGaI...
Deep-ultraviolet LEDs with an Al-graded p-AlGaN layer exhibiting high wal...
 Effect of junction temperature on 1.3 µm InAs/GaAs quantum dot lasers ...
官方微信
友情链接

Single-mode InGaAsP/InP BH lasers based on high-order slotted surface gratings

2024-03-12


Author(s): Guo, J (Guo, Jing); Li, H (Li, Huan); Xiong, XK (Xiong, Xinkai); Zhou, DB (Zhou, Daibing); Zhao, LJ (Zhao, Lingjuan); Liang, S (Liang, Song)

Source: OPTICS LETTERSVolume: 49Issue: 2  Pages: 286-289  DOI: 10.1364/OL.513993  Published: JAN 15 2024

Abstract: A single-mode InGaAsP/InP buried heterostructure (BH) laser based on high-order slotted surface gratings has been fabricated. The introduction of surface slotted grating can simplify the fabrication process of single-mode BH lasers notably. The laser shows a good single-mode emission performance, with larger than 30 dB side-mode suppression ratio (SMSR) when the current is between 200 and 400 mA. Calculations show that the gain coupling mechanism plays a key role for the slot grating to select the emission wavelength. The linewidth of the laser is measured. The fitted Gaussian and Lorentzian linewidths are 1500 and 550 kHz, respectively. (c) 2024 Optica Publishing Group

Accession Number: WOS:001165112500003

PubMed ID: 38194549

ISSN: 0146-9592

eISSN: 1539-4794




关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明