Temperature dependence on the electrical and physical performance of InAs/AlSb heterojunction and high electron mobility transistors
2018-10-08
Temperature dependence on the electrical and physical performance of InAs/AlSb heterojunction and high electron mobility transistors
Authors: Zhang, J; Lv, HL; Ni, HQ; Niu, ZC; Zhang, YM
CHINESE PHYSICS B
Volume: 27 Issue: 9 Published: SEP 2018 Document type: Article
DOI: 10.1088/1674-1056/27/9/097201
全文链接:http://cpb.iphy.ac.cn/EN/abstract/abstract72600.shtml