Mixed-Valence-Driven Quasi-1D (SnSnS3)-Sn-II-S-IV with Highly Polarization-Sensitive UV-vis-NIR
Authors: Yang, H; Pan, LF; Wang, XT; Deng, HX; Zhong, MZ; Zhou, ZQ; Lou, Z; Shen, GZ; Wei, ZM
ADVANCED FUNCTIONAL MATERIALS
Early Access: JULY 2019 Language: English Document type: Article; Early Access
DOI: 10.1002/adfm.201904416
Abstract:
Mixed-valence states can bring unexpected unique phenomena, especially novel anisotropic physics, due to
structural asymmetry, which originate from the discrepant distribution of atoms with different valence.
This study reports an unexploited mixed-valence-driven quasi-1D (SnSnS3)-Sn-II-S-IV crystal, which
exhibits widely and distinctively anisotropic polarized-light absorption reaching approximate to 3.4
from the deep ultraviolet to near-infrared region (250-850 nm). The fabricated polarization-sensitive
photodetectors based on highly air-stable (SnSnS3)-Sn-II-S-IV nanowires display strong linear dichroism
among the UV-vis-NIR spectrum with responsivity exceeding approximate to 150 A W-1. Furthermore, the
devices are further constructed onto a flexible polyethylene terephthalate (PET) substrate and the
photoresponse remains roughly unchanged after repeated bending. This work based on novel mixed-valence-
driven quasi-1D ternary sulfide (SnSnS3)-Sn-II-S-IV excites interest in low-symmetry semiconductors for
developing broadly spectral polarization-sensitive photodetectors with environmental stability and
mechanical flexibility.
Full Text: https://onlinelibrary.wiley.com/doi/10.1002/adfm.201904416