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Mixed-Valence-Driven Quasi-1D (SnSnS3)-Sn-II-S-IV with Highly Polarization-Sensitive UV-vis-NIR

2019-08-01

Authors: Yang, H; Pan, LF; Wang, XT; Deng, HX; Zhong, MZ; Zhou, ZQ; Lou, Z; Shen, GZ; Wei, ZM

ADVANCED FUNCTIONAL MATERIALS

Early Access: JULY 2019 Language: English Document type: Article; Early Access

DOI: 10.1002/adfm.201904416

Abstract:

Mixed-valence states can bring unexpected unique phenomena, especially novel anisotropic physics, due to

structural asymmetry, which originate from the discrepant distribution of atoms with different valence.

This study reports an unexploited mixed-valence-driven quasi-1D (SnSnS3)-Sn-II-S-IV crystal, which

exhibits widely and distinctively anisotropic polarized-light absorption reaching approximate to 3.4

from the deep ultraviolet to near-infrared region (250-850 nm). The fabricated polarization-sensitive

photodetectors based on highly air-stable (SnSnS3)-Sn-II-S-IV nanowires display strong linear dichroism

among the UV-vis-NIR spectrum with responsivity exceeding approximate to 150 A W-1. Furthermore, the

devices are further constructed onto a flexible polyethylene terephthalate (PET) substrate and the

photoresponse remains roughly unchanged after repeated bending. This work based on novel mixed-valence-

driven quasi-1D ternary sulfide (SnSnS3)-Sn-II-S-IV excites interest in low-symmetry semiconductors for

developing broadly spectral polarization-sensitive photodetectors with environmental stability and

mechanical flexibility.

Full Text: https://onlinelibrary.wiley.com/doi/10.1002/adfm.201904416



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