《半导体学报》2019年第9期目录
Flexible Smart Noncontact Control Systems with Ultrasensitive Humidity Se...
Compositional Engineering of Mixed-Cation Lead Mixed-Halide Perovskites f...
Fingerprint-Inspired Conducting Hierarchical Wrinkles for Energy-Harvesti...
Water-proof and thermally inert flexible pressure sensors based on zero t...
A CDMA-based high-speed multi-access VLC system with OOK modulation
Impact of Cone-Shape-Patterned Sapphire Substrate and Temperature on the ...
Label-Free Exosome Detection Based on a Low-Cost Plasmonic Biosensor Arra...
Peeling off Nanometer-Thick Ferromagnetic Layers and Their van der Waals ...
A Face Alignment Accelerator Based on Optimized Coarse-to-Fine Shape Sear...
官方微信
友情链接

The contribution of Cr(III)-doping on the modulation of magnetic and luminescence properties of GaN nanowires

2019-09-12

Authors: Farooq, MU; Zou, BS; Ghaffar, A; Kiani, MS; Atiq, S; Bashir, S; Naseem, S

SUPERLATTICES AND MICROSTRUCTURES

Volume: 132 Published: AUG 2019 Language: English Document type: Article

DOI: 10.1016/j.spmi.2019.106159

Abstract:

An external incorporation of magnetic ions into the parent compounds is often used to tune their semiconducting behavior. For example, doping of a small amount of transition metal ion in a semiconductor can lead to the formation of dilute magnetic semiconductors (DMSs) that can exhibit some novel properties related to spin interactions. Here, we report on Cr(III)-doped GaN nanowires (NWs), prepared by a thermal evaporation method. X-ray diffraction analysis indicates the single crystalline nature of as-synthesized NWs. Each NW is composed of hexagonal-facet with sharp conical shaped tip investigated by a scanning electron microscope (SEM). The appearance of 2LO mode in micro-Raman spectra indicates a strong electronphonon coupling with the A(1)(LO) mode induced by Cr(III) ion. The occurrence of ferromagnetic domains as observed in GaN plays an important role in spin ordering which comes from mixed spin-spin, exciton-spin, and spin-carrier interaction. These findings provide a new path to realize new spin-polarized photonic devices.

Full Text: https://www.sciencedirect.com/science/article/pii/S0749603619303635



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 ? 中国科学院半导体研究所

备案号:京ICP备05085259号 京公网安备110402500052 中国科学院半导体所声明