Author(s): Deng, GR (Deng, Gongrong); Song, XB (Song, Xinbo); Fan, MG (Fan, Mingguo); Xiao, TT (Xiao, Tingting); Luo, ZB (Luo, Zhibing); Chen, N (Chen, Niu); Yang, WY (Yang, Wenyun); Zhang, YY (Zhang, Yiyun)

Source: OPTICS EXPRESS Volume: 28 Issue: 9 Pages: 13616-13624 DOI: 10.1364/OE.387297 Published: APR 27 2020

Abstract: Ga-free InAs/InAsSb type-II superlattices (T2SLs) are emerging as candidate materials for high temperature operation of mid-infrared photodetectors, which are critical for infrared technology with an aim to provide low-cost and compact detection systems. In this work, by utilizing upside-down device structure, a closely lattice-matched Al0.83Ga0.17AsSb quaternary alloy as electron barrier was pre-grown before the growth of InAs/InAsSb T2SLs absorber in a nBn device. Based on this design, we have demonstrated 5-mu m cut-off mid-wavelength infrared (MWIR) photodetectors that exhibited a dark current density of 1.55 x 10(-4) A/cm(2) at an operation bias 400mV at 150K. A saturated quantum efficiency at similar to 4.0 mu m reaches 37.5% with a 2 mu m absorber and the peak responsivity reaches 1.2 A/W, which yields a peak specific detectivity as high as similar to 1.82 x 10(11) cm.Hz(1/2)/W at a forward bias of 400mV. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Accession Number: WOS:000530854700087

PubMed ID: 32403832

ISSN: 1094-4087

Full Text: https://www.osapublishing.org/oe/abstract.cfm?uri=oe-28-9-13616