A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

In Situ Dynamic Manipulation of Graphene Strain Sensor with Drastically Sensing Performance Enhancement

2020-05-29

 

Author(s): Luo, ZW (Luo Zewei); Li, XM (Li Xinming); Li, QL (Li Quanling); Tian, XY (Tian Xiyue); Fan, TY (Fan Tianyi); Wang, CL (Wang Chaolun); Wu, X (Wu Xing); Shen, GZ (Shen, Guozhen)

Source: ADVANCED ELECTRONIC MATERIALS Article Number: 2000269 DOI: 10.1002/aelm.202000269 Early Access Date: MAY 2020

Abstract: It is extremely challenging to directly observe how the relative position of the nanosheet changes the charge transport in the channel. Previous work on graphene stacking strain sensors relies on nanosheet slip to detect small mechanical signals. However, the direct experimental verification evidence is still inadequate. In this work, the sliding conductive transmission of graphene nanosheets slip is directly measured through an improved in situ transmission electron microscopy observation technique. By accurately manipulating the atomic scale of graphene nanosheets to achieve nanoscale sliding, the resistance change between nanosheets in the in situ observation system can be directly measured. Besides, a mechanical sensor based on graphene layer structure is designed, which demonstrates a high gauge factor (4303 at maximum strain of 93.3%), negligible hysteresis (5-10%), and excellent stability over 3000 stretch-release cycles. Besides, the precise control of characteristics offers a practical approach of retaining high stability from device to device. This strain sensor is applied in various cases, especially the health monitor of the human cervical vertebra.

Accession Number: WOS:000533299400001

ISSN: 2199-160X

Full Text: https://onlinelibrary.wiley.com/doi/abs/10.1002/aelm.202000269



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明