Author(s): Liu, XC (Liu, Xingchen); Tang, N (Tang, Ning); Zhang, SX (Zhang, Shixiong); Zhang, XY (Zhang, Xiaoyue); Guan, HM (Guan, Hongming); Zhang, YF (Zhang, Yunfan); Qian, X (Qian, Xuan); Ji, Y (Ji, Yang); Ge, WK (Ge, Weikun); Shen, B (Shen, Bo)

Source: ADVANCED SCIENCE Article Number: 1903400 DOI: 10.1002/advs.201903400 Early Access Date: JUN 2020

Abstract: III-nitride wide bandgap semiconductors are favorable materials for developing room temperature spintronic devices. The effective manipulation of spin dynamics is a critical request to realize spin field-effect transistor (FET). In this work, the dependence of the spin relaxation time on external strain-induced polarization electric field is investigated in InGaN/GaN multiple quantum wells (MQWs) by time-resolved Kerr rotation spectroscopy. Owing to the almost canceled two different spin-orbit coupling (SOC), the spin relaxation time as long as 311 ps in the MQWs is obtained at room temperature, being much longer than that in bulk GaN. Furthermore, upon applying an external uniaxial strain, the spin relaxation time decreases sensitively, which originates from the breaking of the SU(2) symmetry. The extracted ratio of the SOC coefficients shows a linear dependence on the external strain, confirming the essential role of the polarization electric field. This effective manipulation of the spin relaxation time sheds light on GaN-based nonballistic spin FET working at room temperature.

Accession Number: WOS:000536808500001

eISSN: 2198-3844

Full Text: https://onlinelibrary.wiley.com/doi/full/10.1002/advs.201903400