Ultrafast Electron Cooling and Decay in Monolayer WS2 Revealed by Time- and Energy-Resolved Photoemission Electron Microscopy
Author(s): Li, YL (Li, Yaolong); Liu, W (Liu, Wei); Wang, YK (Wang, Yunkun); Xue, ZH (Xue, Zhaohang); Leng, YC (Leng, Yu-Chen); Hu, AQ (Hu, Aiqin); Yang, H (Yang, Hong); Tan, PH (Tan, Ping-Heng); Liu, YQ (Liu, Yunquan); Misawa, H (Misawa, Hiroaki); Sun, Q (Sun, Quan); Gao, YN (Gao, Yunan); Hu, XY (Hu, Xiaoyong); Gong, QH (Gong, Qihuang)
Source: NANO LETTERS Volume: 20 Issue: 5 Pages: 3747-3753 DOI: 10.1021/acs.nanolett.0c00742 Published: MAY 13 2020
Abstract: A comprehensive understanding of the ultrafast electron dynamics in two-dimensional transition metal dichalcogenides (TMDs) is necessary for their applications in optoelectronic devices. In this work, we contribute a study of ultrafast electron cooling and decay dynamics in the supported and suspended monolayer WS2 by time- and energy-resolved photoemission electron microscopy (PEEM). Electron cooling in the Q valley of the conduction band is clearly resolved in energy and time, on a time scale of 0.3 ps. Electron decay is mainly via a defect trapping process on a time scale of several picoseconds. We observed that the trap states can be produced and increased by laser illumination under an ultrahigh vacuum, and the higher local optical-field intensity led to the faster increase of trap states. The enhanced defect trapping could significantly modify the carrier dynamics and should be paid attention to in photoemission experiments for two-dimensional materials.
Accession Number: WOS:000535255300106
PubMed ID: 32242668
Author Identifiers:
Author Web of Science ResearcherID ORCID Number
Misawa, Hiroaki A-4312-2012 0000-0003-1070-387X
SUN, QUAN 0000-0001-5413-8038
TAN, Ping-Heng D-1137-2009 0000-0001-6575-1516
ISSN: 1530-6984
eISSN: 1530-6992
Full Text: https://pubs.acs.org/doi/10.1021/acs.nanolett.0c00742