Author(s): Mao, SW (Mao, Si-Wei); Lu, J (Lu, Jun); Yang, L (Yang, Long); Ruan, XZ (Ruan, Xue-Zhong); Wang, HL (Wang, Hai-Long); Wei, DH (Wei, Da-Hai); Xu, YB (Xu, Yong-Bing); Zhao, JH (Zhao, Jian-Hua)

Source: CHINESE PHYSICS LETTERS Volume: 37 Issue: 5 Article Number: 058501 DOI: 10.1088/0256-307X/37/5/058501 Published: MAY 2020

Abstract: Perpendicularly magnetized L1(0)-MnAl thin films with Co2MnSi buffer layers were prepared on GaAs (001) substrates by molecular-beam epitaxy (MBE). The samples with high crystalline quality show a maximum uniaxial perpendicular magnetic anisotropy constant of 1.4 x 10(7) erg/cm(3). Ultrafast spin dynamics with a magnetization precession frequency up to 200 GHz was investigated by using time-resolved magneto-optical Kerr effect (TRMOKE) measurements, from which the Gilbert damping constant alpha of epitaxial L1(0)-MnAl thin films is evaluated to be less than 0.0175. This work provides an important reference for analyzing the current-induced magnetization switching process in MnAl-based spintronic devices.

Accession Number: WOS:000535604800001

ISSN: 0256-307X

eISSN: 1741-3540

Full Text: https://iopscience.iop.org/article/10.1088/0256-307X/37/5/058501