Author(s): Wang, SY (Wang, Suyuan); Wu, Q (Wu, Qiang); Zheng, J (Zheng, Jun); Zhang, B (Zhang, Bin); Yao, JH (Yao, Jianghong); Zhou, QJ (Zhou, Qingjun); Yang, L (Yang, Li); Xu, JJ (Xu, Jingjun); Cheng, BW (Cheng, Buwen)

Source: JAPANESE JOURNAL OF APPLIED PHYSICS Volume: 59 Issue: 3 Article Number: 034001 DOI: 10.35848/1347-4065/ab705f Published: MAR 1 2020

Abstract: The traditional GeSn/GeSiSn single-heterojunction (SH) n-channel tunneling field-effect transistor (NTFET) faces a serious off-state current (I-OFF) breakdown and a subthreshold swing (SS) degradation when the channel length is scaled to 10 nm. In this work, we propose a double-heterojunction (DH) short channel NTFET by utilizing heterojunction engineering. A 60% lower I-OFF value (4.83 x 10(-10) A mu m(-1)), a 6.2 times higher I-ON value (9.39 x 10(-6) A mu m(-1)) and an SS of 39.14 mV/dec are achieved in the DH NTFET at 0.3 V compared to the SH NTFET when the channel length is 10 nm. (c) 2020 The Japan Society of Applied Physics

Accession Number: WOS:000535618400001

ISSN: 0021-4922

eISSN: 1347-4065

Full Text: https://iopscience.iop.org/article/10.35848/1347-4065/ab705f