Atomic origin of spin-valve magnetoresistance at the SrRuO3 grain boundary
Observation of plasmon boosted photoelectrochemical activities on single ...
Portable and Battery-Powered PCR Device for DNA Amplification and Fluores...
Design of AIN ultraviolet metasurface for single-/multi-plane holography
Investigation of coherency stress-induced phase separation in AlN/AlxGa1-...
(100)-Oriented gallium oxide substrate for metal organic vapor phase epit...
Non-layered ZnSb nanoplates for room temperature infrared polarized photo...
GeSn/GeSiSn double-heterojunction short channel tunnel field-effect trans...
Fano resonance and its application using a defective disk resonator coupl...
Ultrafast Magnetization Precession in Perpendicularly Magnetized L1(0)-Mn...

Low-temperature resistivity anomaly and weak spin disorder in Co2MnGa epitaxial thin films



Author(s): Tong, SC (Tong, Shucheng); Zhao, XP (Zhao, Xupeng); Wei, DH (Wei, Dahai); Zhao, JH (Zhao, Jianhua)

Source: PHYSICAL REVIEW B Volume: 101 Issue: 18 Article Number: 184434 DOI: 10.1103/PhysRevB.101.184434 Published: MAY 29 2020

Abstract: The topological material of Co2MnGa with potentially high spin polarization has attracted more and more attention, in the fields of fundamental science and spintronic applications. Here we report the electrical- and magnetotransport behaviors in epitaxial Co2MnGa thin films. An angle-independent negative linear magnetoresistance and a negative anisotropy magnetoresistance are observed in the whole temperature range from 3 to 300 K, indicating the existence of weak spin disorder and a high spin polarization. Intriguingly, with decreasing temperature an anomalous resistivity upturn that exhibits -T-1/2 dependence is observed, and this phenomenon is robust under magnetic fields. Further analysis demonstrates that the three-dimensional enhanced electron-electron interaction effect is responsible for these phenomena rather than the orbital two-channel Kondo effect or other quantum interference effects, which provides deeper insight into the transport behavior of the Co2MnGa materials.

Accession Number: WOS:000536401900002

ISSN: 2469-9950

eISSN: 2469-9969

Full Text:


北京市海淀区清华东路甲35号 北京912信箱 (100083)




版权所有 中国科学院半导体研究所

备案号:京ICP备05085259号 京公网安备110402500052 中国科学院半导体所声明