A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

Non-layered ZnSb nanoplates for room temperature infrared polarized photodetectors

2020-06-19

 

Author(s): Chai, RQ (Chai, Ruiqing); Chen, YF (Chen, Yunfeng); Zhong, M (Zhong, Mi); Yang, H (Yang, Huai); Yan, FG (Yan, Faguang); Peng, M (Peng, Meng); Sun, YJ (Sun, Yujia); Wang, KY (Wang, Kaiyou); Wei, ZM (Wei, Zhongming); Hu, WD (Hu, Weida); Liu, QJ (Liu, Qijun); Lou, Z (Lou, Zheng); Shen, GZ (Shen, Guozhen)

Source: JOURNAL OF MATERIALS CHEMISTRY C Volume: 8 Issue: 19 Pages: 6388-6395 DOI: 10.1039/d0tc00755b Published: MAY 21 2020

Abstract: In-plane anisotropic two-dimensional (2D) materials with asymmetric lattices are potential candidates for high performance polarized photodetection, which provides much richer optical information than conventional photodetection, such as polarization, azimuth, and ellipticity of the targets. Herein, non-layer structured ZnSb was grown into 2D nanostructures and used to fabricate room-temperature infrared polarized photodetectors. Studies found that the synthesized 2D ZnSb nanoplates exhibited strong in-plane electrical and optical anisotropy due to the low-symmetry crystal structure. The angle-resolved electronic and incident polarization photoelectric measurements confirmed high anisotropic conductivity and linear polarization sensitivity of the ZnSb nanoplates, which are consistent with the theoretical calculations.

Accession Number: WOS:000536880000004

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

Hu, Weida         D-7449-2012         0000-0001-5278-8969

wei, zhong ming                  0000-0002-6237-0993

ISSN: 2050-7526

eISSN: 2050-7534

Full Text: https://pubs.rsc.org/en/content/articlelanding/2020/TC/D0TC00755B#!divAbstract



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明