GeSn/GeSiSn double-heterojunction short channel tunnel field-effect trans...
Fano resonance and its application using a defective disk resonator coupl...
Ultrafast Magnetization Precession in Perpendicularly Magnetized L1(0)-Mn...
Structure and electronic properties of closed-ring defects in epitaxial g...
Realization of fast switching speed and electronic synapse in Ta/TaOx/AlN...
Tunable Room-Temperature Ferromagnetism in Two-Dimensional Cr2Te3
Ultrafast Electron Cooling and Decay in Monolayer WS2 Revealed by Time- a...
Frequency comb with 100 GHz spacing generated by an asymmetric MQW passiv...
Application of Raman spectroscopy to probe fundamental properties of two-...
Effective Manipulation of Spin Dynamics by Polarization Electric Field in...

(100)-Oriented gallium oxide substrate for metal organic vapor phase epitaxy for ultraviolet emission



Author(s): Li, WJ (Li, Weijiang); Guo, L (Guo, Liang); Zhang, SN (Zhang, Shengnan); Hu, Q (Hu, Qiang); Cheng, HJ (Cheng, Hongjuan); Wang, JX (Wang, Junxi); Li, JM (Li, Jinmin); Wei, TB (Wei, Tongbo)

Source: CRYSTENGCOMM Volume: 22 Issue: 18 Pages: 3122-3129 DOI: 10.1039/d0ce00328j Published: MAY 14 2020

Abstract: In this work, we demonstrated the growth of high-quality GaN epilayers and InGaN/GaN multiple quantum wells (MQWs) with 400 nm emission on a (100) beta-Ga2O3 substrate. The dislocation density of GaN epilayers may be obviously reduced by pulsed-growth, attributed to the enhanced three-dimensional to two-dimensional transformation process. A three-stage growth model had been proposed to clarify the underlying mechanism. Furthermore, pulsed-flow growth also enabled the relatively low-stress state (0.12 GPa) of GaN on (100) beta-Ga2O3. Due to the decreased quantum confined Stark effect (QCSE), the MQWs on pulsed-GaN exhibited a lower blue-shift with increased excitation power densities and showed an increased recombination rate. Additionally, a tendency for GaN separation was also observed, beneficial to heat dissipation of devices on (100) beta-Ga2O3. This work may provide a prospective way to fabricate high-performance vertical structure ultraviolet light emitting diodes (LEDs) on (100) beta-Ga2O3 substrates.

Accession Number: WOS:000536772800007

ISSN: 1466-8033

Full Text:!divAbstract


北京市海淀区清华东路甲35号 北京912信箱 (100083)




版权所有 中国科学院半导体研究所

备案号:京ICP备05085259号 京公网安备110402500052 中国科学院半导体所声明