GeSn/GeSiSn double-heterojunction short channel tunnel field-effect trans...
Fano resonance and its application using a defective disk resonator coupl...
Ultrafast Magnetization Precession in Perpendicularly Magnetized L1(0)-Mn...
Structure and electronic properties of closed-ring defects in epitaxial g...
Realization of fast switching speed and electronic synapse in Ta/TaOx/AlN...
Tunable Room-Temperature Ferromagnetism in Two-Dimensional Cr2Te3
Ultrafast Electron Cooling and Decay in Monolayer WS2 Revealed by Time- a...
Frequency comb with 100 GHz spacing generated by an asymmetric MQW passiv...
Application of Raman spectroscopy to probe fundamental properties of two-...
Effective Manipulation of Spin Dynamics by Polarization Electric Field in...

Atomic origin of spin-valve magnetoresistance at the SrRuO3 grain boundary



Author(s): Li, XJ (Li, Xujing); Yin, L (Yin, Li); Lai, ZX (Lai, Zhengxun); Wu, M (Wu, Mei); Sheng, Y (Sheng, Yu); Zhang, L (Zhang, Lei); Sun, YW (Sun, Yuanwei); Chen, SL (Chen, Shulin); Li, XM (Li, Xiaomei); Zhang, JM (Zhang, Jingmin); Li, YH (Li, Yuehui); Liu, KH (Liu, Kaihui); Wang, KY (Wang, Kaiyou); Yu, DP (Yu, Dapeng); Bai, XD (Bai, Xuedong); Mi, WB (Mi, Wenbo); Gao, P (Gao, Peng)

Source: NATIONAL SCIENCE REVIEW Volume: 7 Issue: 4 Pages: 755-762 DOI: 10.1093/nsr/nwaa004 Published: APR 2020

Abstract: Defects exist ubiquitously in crystal materials, and usually exhibit a very different nature from the bulk matrix. Hence, their presence can have significant impacts on the properties of devices. Although it is well accepted that the properties of defects are determined by their unique atomic environments, the precise knowledge of such relationships is far from clear for most oxides because of the complexity of defects and difficulties in characterization. Here, we fabricate a 36.8 degrees SrRuO3 grain boundary of which the transport measurements show a spin-valve magnetoresistance. We identify its atomic arrangement, including oxygen, using scanning transmission electron microscopy and spectroscopy. Based on the as-obtained atomic structure, the density functional theory calculations suggest that the spin-valve magnetoresistance occurs because of dramatically reduced magnetic moments at the boundary. The ability to manipulate magnetic properties at the nanometer scale via defect control allows new strategies to design magnetic/electronic devices with low-dimensional magnetic order.

Accession Number: WOS:000537456300006

ISSN: 2095-5138

eISSN: 2053-714X

Full Text:


北京市海淀区清华东路甲35号 北京912信箱 (100083)




版权所有 中国科学院半导体研究所

备案号:京ICP备05085259号 京公网安备110402500052 中国科学院半导体所声明