Femtosecond green and ultraviolet lasers generated using second-harmonic ...
Effect of Optimization of TiO2 Electron Transport Layer on Performance of...
A10 Gb/s 1.5 mu m Widely Tunable Directly Modulated InGaAsP/InP DBR Laser*
Generation of laser chaos with wide-band flat power spectrum in a circula...
High operating temperature pBn barrier mid-wavelength infrared photodetec...
Manipulating the critical gain level of spectral singularity in active hy...
Characterization Method of Biological Functionalization Process of Silico...
Carbonized Bark by Laser Treatment for Efficient Solar-Driven Interface E...
Deep Ultraviolet Photodetectors Based on Carbon-Doped Two-Dimensional Hex...
Phosphor-converted laser-diode-based white lighting module with high lumi...
官方微信
友情链接

Research progress in large-area perovskite solar cells

2020-07-24

Author(s): Zhao, Y (Zhao, Yang); Ma, F (Ma, Fei); Gao, F (Gao, Feng); Yin, ZG (Yin, Zhigang); Zhang, XW (Zhang, Xingwang); You, JB (You, Jingbi)

Source: PHOTONICS RESEARCH Volume: 8 Issue: 7 Pages: A1-A15 DOI: 10.1364/PRJ.392996 Published: JUL 1 2020

Abstract: The record power conversion efficiency of small-area perovskite solar cells has impressively exceeded 25%. For commercial application, a large-area device is the necessary next step. Recently, significant progress has been achieved in fabricating efficient large-area perovskite solar cells. In this review, we will summarize recent achievements in large-area perovskite solar cells including the deposition methods as well as growth control of the large-area, high-quality perovskite layer and also the charge transport layer. Finally, we will give our insight into large-area perovskite solar cells. (c) 2020 Chinese Laser Press

Accession Number: WOS:000546819500001

ISSN: 2327-9125

Full Text: https://www.osapublishing.org/prj/abstract.cfm?uri=prj-8-7-A1



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259号 京公网安备110402500052 中国科学院半导体所声明