Author(s): Wang, LH (Wang, Lihao); Liu, MJ (Liu, Meijie); Zhao, JY (Zhao, Junyuan); Zhao, JC (Zhao, Jicong); Zhu, YF (Zhu, Yinfang); Yang, JL (Yang, Jinling); Yang, FH (Yang, Fuhua)

Source: MICROMACHINES Volume: 11 Issue: 7 Article Number: 638 DOI: 10.3390/mi11070638 Published: JUL 2020

Abstract: This work reports a batch fabrication process for silicon nanometer tip based on isotropic inductively coupled plasma (ICP) etching technology. The silicon tips with nanometer apex and small surface roughness are produced at wafer-level with good etching homogeneity and repeatability. An ICP etching routine is developed to make silicon tips with apex radius less than 5 nm, aspect ratio greater than 5 at a tip height of 200 nm, and tip height more than 10 mu m, and high fabrication yield is achieved by mask compensation and precisely controlling lateral etch depth, which is significant for large-scale manufacturing.

Accession Number: WOS:000557644300001

PubMed ID: 32610624

eISSN: 2072-666X

Full Text: https://www.mdpi.com/2072-666X/11/7/638