Acceptor Decoration of Threading Dislocations in (Al, Ga)N/GaN Heterostructures
Author(s): Wang, R (Wang, Rong); Tong, XD (Tong, Xiaodong); Xu, JX (Xu, Jianxing); Dong, CL (Dong, Chenglong); Cheng, Z (Cheng, Zhe); Zhang, L (Zhang, Lian); Zhang, SY (Zhang, Shiyong); Zheng, PH (Zheng, Penghui); Chen, FX (Chen, Feng-Xiang); Zhang, Y (Zhang, Yun); Tan, W (Tan, Wei)
Source: PHYSICAL REVIEW APPLIED Volume: 14 Issue: 2 Article Number: 024039 DOI: 10.1103/PhysRevApplied.14.024039 Published: AUG 14 2020
Abstract: We demonstrate that threading dislocations in (Al, Ga)N/GaN heterostructures can be spontaneously decorated by acceptors during the epitaxial process. First-principles calculations show that the threading dislocation introduces detrimental deep electronic states both above the valence-band maximum (VBM) and below the conduction-band minimum (CBM) of GaN. Because of the electron transfer between the occupied level above the VBM of the threading dislocation and the defect states of acceptors, acceptors will decorate the threading dislocation, which leads to the shift of the dislocation states. For the occupied deep states above the VBM, the acceptor decoration shifts the deep states toward the VBM, which may constructively contribute to the dislocation tolerance of (Al, Ga)N/GaN heterostructures. For the unoc-cupied states below the CBM, the acceptor-decorated dislocation provides an additional electron-transfer channel besides that through the pure threading dislocations. These two distinct electron-transfer channels are observed in reverse-biased (Al, Ga)N/GaN Schottky diodes, which is characterized by two distinct Frenkel-Poole-emission states.
Accession Number: WOS:000560782200001