Phase Change Behavior and Multi-Level Storage for V(2)O(5)Thin Film in Phase-Change Memory Application
Author(s): Xu, YK (Xu, Yongkang); Hu, YF (Hu, Yifeng); Sun, S (Sun, Song); Lai, TS (Lai, Tianshu)
Source: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY Volume: 9 Issue: 7 Article Number: 073001 DOI: 10.1149/2162-8777/abadeb Published: JAN 9 2020
Abstract: In heating process, the two obvious resistance mutations were observed for V(2)O(5)films at 320 degrees C and 345 degrees C. The crystallization mechanism of one-dimensional growth was the main reason for the rapid phase transition. Accompanied with the phase change, the microcrystalline and polycrystalline phases formed one after another. The element scan of micro-distribution indicated that the distribution of V and O elements were uniform. A good adhesive force was demonstrated by the scratch test. The multi-level storage was achieved in V2O5-based phase change memory device with a fast speed of 100 ns.
Accession Number: WOS:000562278800001