InP-Based Surface-Emitting Distributed Feedback Lasers Operating at 2004 nm
Author(s): Wang, DB (Wang, Dong-Bo); Zhang, JC (Zhang, Jin-Chuan); Li, SS (Li, Sen-Sen); Cheng, FM (Cheng, Feng-Min); Gu, ZH (Gu, Zeng-Hui); Zhu, YX (Zhu, Yi-Xuan); Zhuo, N (Zhuo, Ning); Zhai, SQ (Zhai, Shen-Qiang); Wang, LJ (Wang, Li-Jun); Liu, JQ (Liu, Jun-Qi); Liu, SM (Liu, Shu-Man); Liu, FQ (Liu, Feng-Qi); Wang, ZG (Wang, Zhan-Guo)
Source: IEEE PHOTONICS TECHNOLOGY LETTERS Volume: 31 Issue: 21 Pages: 1701-1704 DOI: 10.1109/LPT.2019.2942643 Published: NOV 1 2019
Abstract: We demonstrate InP-based buried grating coupled surface-emitting distributed feedback (DFB) lasers designed to operate at a wavelength of 2004 nm. The laser structure consists of three InGaAsSb/InGaAs QWs, with a 5 mu m wide double-channel ridge waveguide. A second-order semiconductor/semiconductor grating is used for in-plane feedback and vertical out-coupling. The single longitudinal mode emission wavelength of the fabricated laser can be adjusted from 2002.7 to 2006 nm without any mode hopping. High side-mode suppression ratio (SMSR) of at least 35 dB is achieved under all injection currents and temperature conditions. The edge output power reaches 19 mW, measured in continuous-wave (CW) mode at 10 degrees C. Simultaneously, the output power of surface emission reaches 8 mW.
Accession Number: WOS:000564204200006
Full Text: https://ieeexplore.ieee.org/document/8846090