Flexible sliding sensor for simultaneous monitoring deformation and displ...
Carbon/binder free 3D Si@Cu2O anode for high performance lithium ion battery
Recent research progress of ferroelectric negative capacitance field effe...
Experimental Demonstration of Directly Modulated DFB Lasers With Negative...
Preparation of three-dimensional graphene foam with controllable defects ...
Hybrid Fourier-domain mode-locked laser for ultra-wideband linearly chirp...
The Effect of Bias and Frequency on Amplitude to Phase Conversion of Phot...
Acceptor Decoration of Threading Dislocations in (Al, Ga)N/GaN Heterostru...
Nonequilibrium interplay between Andreev bound states and Kondo effect
Ultrafast plasmonic lasing from a metal/semiconductor interface

InP-Based Surface-Emitting Distributed Feedback Lasers Operating at 2004 nm


Author(s): Wang, DB (Wang, Dong-Bo); Zhang, JC (Zhang, Jin-Chuan); Li, SS (Li, Sen-Sen); Cheng, FM (Cheng, Feng-Min); Gu, ZH (Gu, Zeng-Hui); Zhu, YX (Zhu, Yi-Xuan); Zhuo, N (Zhuo, Ning); Zhai, SQ (Zhai, Shen-Qiang); Wang, LJ (Wang, Li-Jun); Liu, JQ (Liu, Jun-Qi); Liu, SM (Liu, Shu-Man); Liu, FQ (Liu, Feng-Qi); Wang, ZG (Wang, Zhan-Guo)

Source: IEEE PHOTONICS TECHNOLOGY LETTERS Volume: 31 Issue: 21 Pages: 1701-1704 DOI: 10.1109/LPT.2019.2942643 Published: NOV 1 2019

Abstract: We demonstrate InP-based buried grating coupled surface-emitting distributed feedback (DFB) lasers designed to operate at a wavelength of 2004 nm. The laser structure consists of three InGaAsSb/InGaAs QWs, with a 5 mu m wide double-channel ridge waveguide. A second-order semiconductor/semiconductor grating is used for in-plane feedback and vertical out-coupling. The single longitudinal mode emission wavelength of the fabricated laser can be adjusted from 2002.7 to 2006 nm without any mode hopping. High side-mode suppression ratio (SMSR) of at least 35 dB is achieved under all injection currents and temperature conditions. The edge output power reaches 19 mW, measured in continuous-wave (CW) mode at 10 degrees C. Simultaneously, the output power of surface emission reaches 8 mW.

Accession Number: WOS:000564204200006

ISSN: 1041-1135

eISSN: 1941-0174

Full Text: https://ieeexplore.ieee.org/document/8846090


北京市海淀区清华东路甲35号 北京912信箱 (100083)





版权所有 中国科学院半导体研究所

备案号:京ICP备05085259号 京公网安备110402500052 中国科学院半导体所声明