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Strain modulated luminescence in green InGaN/GaN multiple quantum wells with microwire array by piezo-phototronic effect



Author(s): Chen, RF (Chen, Renfeng); Yin, Y (Yin, Yu); Wang, LL (Wang, Lulu); Gao, YQ (Gao, Yaqi); He, R (He, Rui); Ran, JX (Ran, Junxue); Wang, JX (Wang, Junxi); Li, JM (LI, Jinmin); Wei, TB (Wei, Tongbo)

Source: OPTICS LETTERS Volume: 47 Issue: 23 Pages: 6157-6160 DOI: 10.1364/OL.477968 Published: DEC 1 2022

Abstract: We have demonstrated piezo-phototronic enhanced modulation in green InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with a microwire array (MWA) structure. It is found that an a-axis oriented MWA structure induces more c-axis compressive strain than a flat structure when a convex bending strain is applied. Moreover, the photoluminescence (PL) intensity exhibits a tendency to increase first and then decrease under the enhanced compressive strain. Specifically, light intensity reaches a maximum of about 123% accompanied by 1.1-nm blueshift, and the carrier lifetime comes to the minimum simultaneously. The enhanced luminescence characteristics are attributed to strain-induced interface polarized charges, which modulate the built-in field in InGaN/GaN MQWs and could promote the radiative recombination of carriers. This work opens a pathway to drastically improve InGaN-based long-wavelength micro-LEDs with highly efficient piezo-phototronic modulation. (c) 2022 Optica Publishing Group

Accession Number: WOS:000936523600007

ISSN: 0146-9592

eISSN: 1539-4794

Full Text: https://opg.optica.org/ol/abstract.cfm?uri=ol-47-23-6157


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