A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

Coherence-adjustable, high-directional, electrically pumped semiconductor lasers around 650 nm

2023-03-17

 

Author(s): Liu, LJ (Liu, Lingjuan); Wang, YF (Wang, Yufei); Ji, HY (Ji, Haiyang); Fu, T (Fu, Ting); Zheng, WH (Zheng, Wanhua)

Source: ELECTRONICS LETTERS Volume: 59 Issue: 5 Article Number: e12747 DOI: 10.1049/ell2.12747 Published: MAR 2023

Abstract: By fabricating patterned electrodes on a dumbbell-shaped cavity semiconductor laser, the coherence of the laser can be switched by only changing the injection current. The threshold current and the peak power of the laser are 0.75 A and 1.41 W @ 3 A. Under the injection of small and large currents, the measured speckle contrasts are 40.0% @ 0.8 A and 7.0% @ 3 A. And the corresponding horizontal far-field divergence angles are 4.05 degrees and 8.7 degrees, respectively, showing a high directionality. Such a laser with a wide range of adjustable coherence and a high directionality has a great potential in the field of bioimaging.

Accession Number: WOS:000943325000001

ISSN: 0013-5194

eISSN: 1350-911X

Full Text: https://ietresearch.onlinelibrary.wiley.com/doi/10.1049/ell2.12747



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明